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SK Hynix will begin mass production of 375-layer NAND by the end of the year; "Replacing tungsten with molybdenum" is expected to help improve performance

金色财经_
Golden Finance reports that on June 11, according to South Korean tech media "THEELEC," SK Hynix has completed production verification of the next-generation V10 series 375-layer 3D NAND flash memory, and is advancing the production line transition, aiming to achieve mass production through upgrades to existing factories by 2026, challenging Samsung Electronics' leading position in ultra-high stacking technology. The biggest highlight of this technological iteration is the material innovation in the metal wiring layer, replacing some word lines from traditional tungsten with molybdenum. As 3D NAND advances beyond 600 layers, molybdenum material is expected to become a key core in the era of ultra-high stacking.
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