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Our country’s invented “quantum flash” technology has successfully built a co-planar drain–channel–source “unified” structure, and for the first time clearly observed non-volatile storage behavior of single electrons at room temperature.

MarsBitNews
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Abstract generation in progress
Mars Finance reports that in the early hours of July 17 (Beijing time), a research team led by Zhou Peng–Liu Chunsen from Fudan University’s National Key Laboratory of Integrated Circuits and the Integrated Circuits and Micro-/Nano-Electronics Innovation Institute published a major breakthrough in Science. Their invented “Quantum Flash” technology successfully constructed a coplanar drain–channel–source “unification” structure, and for the first time clearly observed the non-volatile storage behavior of single electrons in a room-temperature environment (27°C). This not only completely breaks the traditional understanding that “single-electron storage” cannot be achieved, but also opens up a new theoretical framework for single-electron quantum storage, laying key theoretical foundations for the computing power revolution in the AI era. The study increases the information density of charge storage to the theoretical limit, achieving “one electron, one bit,” and also provides new technical groundwork for developing high-density memory to meet the needs of artificial general intelligence (AGI). Currently, the team has systematically connected the entire chain—from underlying materials and device innovation to high-end chip integration and applications: “Dawn” achieves breakthroughs in access speed, “Unification” addresses the density limit, and “Long Ying” completes prototype chip verification compatible with existing CMOS silicon process technology. (The Paper)
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