Crypto news flash: Anfu Technology said on an interactive platform that Suzhou Yixian Micro has successfully rolled out a single-wave 400Gbps optical chip for 3.2T data center optical modules, based on its silicon photonics heterogeneous integration thin-film lithium niobate technology platform. The move directly targets the needs for next-generation, higher-speed optical interconnects.

View Original
This page may contain third-party content, which is provided for information purposes only (not representations/warranties) and should not be considered as an endorsement of its views by Gate, nor as financial or professional advice. See Disclaimer for details.
  • Reward
  • 3
  • 2
  • Share
Comment
Add a comment
Add a comment
PhishHunter
· 2h ago
Seeing the words “silicon photonic heterogeneous integration” instantly gets me excited—there aren’t many teams in China that can make this, and Anfu made this move early.
View OriginalReply0
DigitalSacredFire
· 2h ago
Thin-film niobium lithium finally made it out of the lab—single-channel 400Gbps. The core devices for next-generation optical interconnects are depending on breakthroughs like this, and we’re looking forward to production progress.
View OriginalReply0
MintpassHunter
· 2h ago
Silicon photonics + thin-film lithium niobate—this technology path is a solid pick. A 400G single wavelength line can reach 3.2T modules, and domestic substitution is advancing further.
View OriginalReply0
  • Pinned