South Korean media reports that China's Changxin Memory Technologies (CXMT) is currently testing a bonded DRAM pilot line in Hefei, aiming to produce high-performance DRAM without using EUV lithography.

So-called bonded DRAM is a technology where memory cell arrays and peripheral circuits are fabricated on separate wafers and then bonded together. In this way, ultra-high-density DRAM can be produced using only DUV deep ultraviolet lithography combined with multi-patterning processes, eliminating the need for EUV equipment.

Samsung Electronics is developing its own bonded DRAM under the "B1b" project, and SK Hynix is also advancing similar technology. However, South Korean media warns that there are currently assessments suggesting that Changxin Memory may already be ahead of its South Korean competitors in both the technology itself and its development speed.