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CICC: Core third-generation compound semiconductor devices are expected to continue benefiting from data center power-related system upgrades.

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CICC pointed out that after AI computing power moves toward high density, continuous full load, and strong transient impact, high-voltage architecture is the definite direction for data center power supply system development. Driven by hardware technological advances, 2026 will be the first year of implementation for high-voltage architecture in data centers. CICC believes that core third-generation compound semiconductor devices such as SiC/GaN will continue to benefit from the upgrade of data center power-related systems. SiC is expected to dominate the gray area on the machine room side, while GaN is expected to penetrate extensively in the white area inside the cabinet. This creates a market landscape of "SiC to the left, GaN to the right" along the gray-white boundary, both benefiting from the iteration of data center power supply solutions.
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