Information storage, sensing, and AI tri-sector development, this material has some substance.

Georgia Institute of Technology in the United States has developed a new type of ferroelectric NAND flash memory, using hafnium oxide material compatible with silicon processes, which has spontaneous polarization and reversible ferroelectric properties. This flash memory has strong AI task processing capabilities, with radiation resistance 30 times that of traditional flash memory, and can withstand up to 1 million rads, equivalent to 100 million X-ray exposures. The paper was published in Nano Letters, demonstrating its potential applications in information storage, sensing, AI, and low-power chips.