Futures
Access hundreds of perpetual contracts
CFD
Gold
One platform for global traditional assets
Options
Hot
Trade European-style vanilla options
Unified Account
Maximize your capital efficiency
Demo Trading
Introduction to Futures Trading
Learn the basics of futures trading
Futures Events
Join events to earn rewards
Demo Trading
Use virtual funds to practice risk-free trading
Launch
CandyDrop
Collect candies to earn airdrops
Launchpool
Quick staking, earn potential new tokens
HODLer Airdrop
Hold GT and get massive airdrops for free
Pre-IPOs
Unlock full access to global stock IPOs
Alpha Points
Trade on-chain assets and earn airdrops
Futures Points
Earn futures points and claim airdrop rewards
Promotions
AI
Gate AI
Your all-in-one conversational AI partner
Gate AI Bot
Use Gate AI directly in your social App
GateClaw
Gate Blue Lobster, ready to go
Gate for AI Agent
AI infrastructure, Gate MCP, Skills, and CLI
Gate Skills Hub
10K+ Skills
From office tasks to trading, the all-in-one skill hub makes AI even more useful.
GateRouter
Smartly choose from 40+ AI models, with 0% extra fees
New NAND flash memory's radiation resistance is 30 times that of traditional flash memory
Mars Finance News, May 22: Scientists at the Georgia Institute of Technology in the United States have developed a new type of NAND flash memory. It can efficiently handle artificial intelligence (AI) tasks and withstand extreme radiation in space, with its radiation resistance reaching 30 times that of traditional NAND flash memory. The related research paper has been published in the latest issue of Nano Letters magazine.
The new NAND flash memory uses the ferroelectricity of hafnium oxide materials that are compatible with silicon processing. Specifically, within a certain temperature range, the material will spontaneously generate polarization, and the polarization direction can be reversed under the action of an external electric field. This feature gives ferroelectric materials strong application potential in information storage, sensing, artificial intelligence, and next-generation low-power chips.
Test results show that this ferroelectric flash memory can withstand up to 1 million rads (radiation absorbed dose), equivalent to 100 million X-ray exposures. Its radiation tolerance is 30 times that of traditional memory. (Science and Technology Daily)