Samsung Electronics, whose main business is improving with the 10th generation NAND+SiC+glass substrates, plans to restart the "future growth engine."

Over the past few years, amid fierce competition in the DRAM and HBM markets, many of Samsung Electronics’ new semiconductor businesses were temporarily put on hold.
As the main memory business stabilizes, the company may restart efforts for next-generation semiconductors.

According to ETNews, Samsung Electronics’ DS division is discussing resuming R&D and investment in next-generation semiconductors.
It is reported that the focus of these discussions is on research directions and the timing of facility investments, including next-generation NAND flash, compound semiconductors, and substrates.

Sources reveal that Samsung Electronics is sharing information with partner companies regarding technology development and facility investments.
The company believes its fundamental competitiveness in the memory field has been restored to a certain level, and is therefore beginning to restart innovation for future growth engines.
Key plans for some new businesses are expected to be finalized soon.

In the current booming AI industry, which directions does Samsung see as future growth engines?

Tenth Generation NAND “V10”

Last year, Samsung Electronics planned to establish a tenth-generation NAND (V10) production line in the first half of this year, with mass production starting in the second half.
However, as of now, purchase orders have not yet been officially issued.

Reports indicate that Samsung Electronics has restarted investments related to V10, the 400-layer NAND.
Due to the significant increase in layers, the via holes used for signal exchange between vertically stacked storage cells must be deeper.
To achieve this, Samsung Electronics will adopt low-temperature etching technology, which is currently in the final stages of selecting a low-temperature etching equipment supplier.

Additionally, V10 will employ “wafer-to-wafer (W2W)” bonding and introduce laser processing technology for precise wafer cutting.
This technology aims to improve NAND flash performance and yield by using a cutting method that minimizes foreign particle generation without affecting microcircuits.

Gallium Nitride (GaN) and Silicon Carbide (SiC)

Another new business Samsung Electronics is restarting involves compound semiconductors, with GaN and SiC being typical representatives.
As early as 2023, Samsung Electronics began transitioning to GaN and SiC production lines to maximize the efficiency of its 8-inch semiconductor foundry lines.

It is reported that Samsung Electronics has discussed with some partners regarding the scale of additional equipment needed for SiC production.
Industry insiders predict that Samsung Electronics will start establishing a supply chain this year, with a prototype production pilot line expected to be built by 2027, and mass production of SiC beginning in 2028.

Sources reveal that Samsung Electronics has begun vigorously promoting its GaN and SiC businesses, viewing them as key strategic directions.

Glass Substrates

According to reports, Samsung Electronics is seeking to accelerate the adoption of glass substrates through cooperation with multiple substrate manufacturing supply chain companies.

Glass substrates are a type of packaging substrate that demonstrate unique advantages in high-density interconnects and high-frequency signal transmission.
Industry insiders say: “Samsung Electronics is contacting multiple suppliers to compare and analyze the performance and quality of glass substrates.”
He also added: “It is understood that they are carefully coordinating a supply chain diversification strategy to promote the introduction of glass substrates.”

Meanwhile, SoCAMM, a rapidly emerging low-power memory module, is also expected to become a key focus for Samsung Electronics.
It is reported that Samsung Electronics is mass-producing SoCAMM2 for AI applications such as Nvidia, with plans to increase supply to meet future demand.

(Source: Cailian Press)