Samsung Electronics accelerates the development of the next-generation high-bandwidth memory; the first batch of HBM4E will be produced in May.

Mars Finance News, April 17 — According to reports, Samsung Electronics is making every effort to advance the research and development of its next-generation high-bandwidth memory (HBM) products, aiming to further strengthen its position in the high-end artificial intelligence memory market. The report states that Samsung Electronics plans to produce the first batch of HBM4E samples meeting NVIDIA standards as early as May 2026. Industry insiders reveal that Samsung has a clear and tight schedule. Its goal is to successfully produce samples of the HBM4E core logic chips through its foundry division by mid-next month. (Wide-angle observation)

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