South Korea achieves major progress in p-type perovskite transistors, expected to be used in AI computing DRAM.

A South Korean research team has achieved a breakthrough in the semiconductor field, successfully developing a p-type perovskite transistor with significantly improved performance and stability. This breakthrough is expected to solve a core problem that has long limited the development of high-performance, low-power chips, and open new paths for next-generation memory devices such as vertically stacked DRAM for AI computing.

According to a report by The Korea Herald on Thursday, the research team led by Professor Noh Yong-young of Pohang University of Science and Technology (POSTECH) announced that the p-type perovskite transistor based on a cesium-tin-iodine (CsSnI₃) thin film they developed exhibits a hole mobility exceeding 50 cm²/V·s and a current on/off ratio exceeding 100 million (10⁸), reaching the highest level among p-type perovskite transistors globally. The related research results have been published in the international top-tier academic journal Nature.

The core breakthrough of this research lies in solving the long-standing air stability problem of tin-based perovskite semiconductors — the new device can operate stably in air for over 4 hours, and maintain its initial performance for more than one month under accelerated aging conditions at 100°C, whereas previous similar devices failed within minutes in air.

The research team stated that this achievement will accelerate the practical application process of p-type perovskite thin-film transistors in integrated circuits, and is of great significance for fields such as vertically stacked DRAM for AI computing, next-generation display driver circuits, and wearable devices.

p-type transistor: One of the "Top Ten Future Challenges" in the semiconductor field

Transistors are the basic building blocks of chips, divided into n-type (which transport electrons) and p-type (which transport holes, the vacancies left after electrons leave). The realization of high-performance, low-power semiconductors depends on the balanced performance of both types of transistors. However, improving the performance of p-type transistors has always been extremely difficult, and has been listed by the Ministry of Science and ICT of South Korea as one of the "Top Ten Future Challenges in the Semiconductor Field."

Tin-based perovskite materials have long been considered a candidate solution to this challenge due to their smooth hole transport and performance comparable to existing oxide semiconductors. However, their biggest drawback is extreme sensitivity to air: residual unreacted tin ions (Sn²⁺) on the material surface rapidly oxidize upon contact with air, generating a large number of defects that hinder charge flow, leading to a sharp decline in semiconductor performance.

"Volatile Surface Reconstruction" Strategy Breaks Stability Bottleneck

Professor Noh Yong-young's team proposed a solution named "Volatile Surface Reconstruction."

After applying potassium acetate (KAc) treatment to the surface of the CsSnI₃ semiconductor, the research team transformed the unreacted tin ions that originally caused performance degradation into a volatile compound, stannous acetate (Sn(Ac)₂), which naturally evaporates into the air. After the tin ions leave, potassium iodide (KI) spontaneously forms in situ, creating a "self-defense layer" that protects the semiconductor from external environmental erosion.

This process significantly reduces the threshold voltage of the device, achieving a hole mobility exceeding 50 cm²/V·s and a current on/off ratio above 10⁸. In terms of stability, the new device can operate continuously in air for more than 4 hours, and maintain its initial performance for over a month under accelerated aging at 100°C, representing a qualitative leap in stability compared to previous similar devices.

Application Prospects: AI Memory, Display Drivers, and Wearable Devices

Professor Noh Yong-young stated that this is the first time worldwide that research on p-type perovskite thin-film transistors has been published in Nature, thanks to the continuous support from Samsung Display and the Ministry of Science and ICT of South Korea over the past six years.

He pointed out that this research has solved the long-standing low stability problem of tin-based perovskite semiconductors, and will promote the establishment of long-term stability of p-type perovskite thin-film transistors and their application in integrated circuits. In terms of application directions, this technology is expected to become an important foundation for core technologies in the future electronics industry, such as vertically stacked DRAM memory devices for AI computing, next-generation display driver circuits, wearable devices, and highly integrated semiconductor devices.

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