Samsung HBM4E yield rate exceeds 70%: Development of seventh-generation AI memory enters stable phase

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Jinse Finance reports that on July 1, Samsung Electronics' CTO and head of the Semiconductor Research Institute stated at an internal business briefing for the DS (Device Solutions) division that the reliability test yield rate for HBM4E has exceeded 70%. The industry generally considers a yield rate above 80% as the "mature yield" threshold for stable processes, while HBM4E is still in the reliability testing phase, with a level above 70% indicating that the development process has officially entered a stable range. Meanwhile, on the same occasion, he revealed that the next-generation 10nm-class seventh-generation DRAM process (D1d) has gained a competitive advantage over rivals in terms of technical competitiveness, and plans to complete production readiness certification (PRA) in November this year.
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