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Samsung HBM4E Yield Exceeds 70%, Next-Generation DRAM Process D1d Aiming for Production Readiness Approval in November

AirdropBlackHole
On July 1, Samsung Electronics announced progress in the development of HBM4E (seventh generation) and the next-generation DRAM after becoming the first in the world to mass-produce HBM4 (sixth generation). Song Jae-hyuk, CTO of Samsung's DS division and head of the Semiconductor Research Institute, stated during an internal business update meeting on June 30 that the reliability testing yield of HBM4E has surpassed 70%. The industry generally considers a yield above 80% to indicate a stable 'mature yield' phase; thus, a yield above 70% is seen as a sign that development is entering a stable range. Samsung began mass production of HBM4 in February this year and publicly released detailed technical specifications for HBM4E's 12-layer products on May 29, shipping samples to key customers. HBM4 will be used in NVIDIA's AI accelerator Vera Rubin, set to launch in the second half of this year, while HBM4E is expected to be utilized in NVIDIA's next-generation AI accelerator Vera Rubin Ultra, slated for release next year. Development of Samsung's next-generation DRAM process is also progressing smoothly. Song Jae-hyuk believes that the D1d process technology has competitive advantages over rivals and aims to achieve production readiness approval by November. D1d is the core DRAM process that Samsung plans to apply starting with the next-generation HBM5 (eighth generation), and if development proceeds as planned, it will positively impact the competitiveness of the next-generation DRAM and subsequent HBM5 products. (Fnnews)
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