CICC: Core third-generation compound semiconductor devices are expected to continue benefiting from data center power-related system upgrades.

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Mars Finance News reports that CICC noted that after AI computing power moves toward high density, continuous full-load operation, and strong transient shock impacts, high-voltage architecture is the determined direction for the development of data center power supply systems. Driven by advances in hardware technology, 2026 is expected to be the first year when data center high-voltage architecture is rolled out. CICC believes that core third-generation compound semiconductor devices such as SiC and GaN are expected to continue benefiting from upgrades to data-center power-related systems: SiC is expected to lead in applications on the server room side (gray area), while GaN is expected to see large-scale penetration inside cabinets (white area). This will form a market landscape of “SiC on the left, GaN on the right” along the boundary between the gray and white areas, and both will benefit together from the iteration of data center power supply solutions. (Cailianshe)
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