Yunnan Germanium Industry: La filial controlada implementará el "Proyecto de construcción de obleas de cristal único de fosfuro de indio de alta calidad", con una inversión total planificada de 189 millones de yuanes

Yunnan Germanium Industry announces that on April 3, 2026, the company’s Ninth Board of Directors’ second meeting approved the “Proposal for the Implementation of the ‘High-Quality Indium Phosphide Single Crystal Chip Construction Project’”, and agreed to have the controlling subsidiary Yunnan Xinyao Semiconductor Materials Co., Ltd. implement the “High-Quality Indium Phosphide Single Crystal Chip Construction Project”. The total planned investment for the project is 189 million yuan, with Yunnan Xinyao expanding capacity based on existing production capacity, ultimately reaching an annual production capacity of 450,000 pieces (equivalent to 4-inch) high-quality indium phosphide single crystal chips.